Although perovskite light-emitting diodes (PeLEDs) are promising for next-generation displays and lighting, their efficiency is still considerably below that of conventional inorganic and organic counterparts. Significant efforts in various aspects of the electroluminescence process are required to achieve high-performance PeLEDs. Here, we present an improved flexible PeLED structure based on the rational interface engineering for energy-efficient photon generation and enhanced light outcoupling. The interface-stimulated crystallization and defect passivation of the perovskite emitter are synergistically realized by tuning the underlying interlayer, leading to the suppression of trap-mediated nonradiative recombination losses. Besides approaching highly emissive perovskite layers, the outcoupling of trapped light is also enhanced by combining the silver nanowires-based electrode with quasi-random nanopatterns on flexible plastic substrate. Upon the collective optimization of the device structure, a record external quantum efficiency of 24.5% is achieved for flexible PeLEDs based on green-emitting CsPbBr3 perovskite.

Efficient and stable blue emission of perovskite light-emitting diodes (PeLEDs) is a requisite toward their potential applications in full-color displays and solid-state lighting. Rational manipulation over the entire electroluminescence process is promising to break the efficiency limit of blue PeLEDs. Herein, a facile device architecture is proposed to achieve efficient blue PeLEDs for simultaneously reducing the energetic loss during electronphoton conversion and boosting the light outcoupling. Effective interfacial engineering is employed to manipulate the perovskite crystallization nucleation, enabling highly compact perovskite nanocrystal assemblies and suppressing the trap-induced carrier losses by means of interfacial hydrogen bonding interactions. This strategy contributes to a high external quantum efficiency (EQE) of 12.8% for blue PeLEDs emitting at 486 nm as well as improved operational stability. Moreover, blue PeLEDs reach a peak EQE of 16.8% with the incorporation of internal outcoupling structures for waveguided light, which can be further raised to 27.5% by integrating a lensbased structure for substrate-mode light. These results verify the validity of this strategy in producing efficient and stable blue PeLEDs for practical applications.

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As one common electron transport material for planar n‐i‐p perovskite solar cell, titanium dioxide (TiO2) compact layer has several challenging issues, such as surface hydroxyl groups, high defect density, and unmatched energy levels, causing severe energy loss and poor stability at contact. To solve these problems, the authors introduce a thin [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) interlayer doped with an air stable n‐type dopant, 3‐dimethyl‐2‐phenyl‐2,3‐dihydro‐1H‐benzoimidazole (DMBI) to modify the TiO2 surface. The state‐of‐the‐art characterizations demonstrate such modification significantly improves charge transfer at MAPbI3/TiO2 interface together with smaller energy level offset, leading to suppressed charge recombination. High‐quality perovskite film with larger crystal grain size grows on the n‐doped PCBM/TiO2 attributed to the better surface affinity. As a result, the average power conversion efficiency of perovskite solar cell exhibits a prominent improvement from 17.46% to 20.14%, with an enhancement in all device photovoltaic parameters. In addition, the stability of the device with n‐doped PCBM/TiO2 is much better than that of the control device with the bare TiO2 due to hydrophobicity nature of PCBM and low defect densities in the perovskite film and at the interface. This work indicates that many further device performance improvements should be conceivable by focusing on the perovskite interface.