In the present study, MoO3:MoS2 hybrid thin layers have been synthesized through partial oxidation of MoS2. We have demonstrated that the reaction requires darkness conditions to decrease the oxidation rate, thus obtaining the hybrid, MoO3:MoS2. A simple liquid-phase exfoliation (LPE) is carried out to achieve homogenous MoS2 nanoflakes and high reproducibility of the results after MoS2 oxidation. XPS analyses reveal the presence of MoO3, MoS2, and MoOxSy in the hybrid layer. These results are also confirmed by X-ray diffraction and high-resolution TEM. Optical absorbance reveals that the absorption peaks of the MoO3:MoS2 hybrid are slightly redshifted with the appearance of absorption peaks in the near-infrared region due to the defects created after the oxidation reaction. The composition and atomic percentages of each component in the hybrid layer as a function of reaction time have also been reported to give perspective guides for improving electronic and optoelectronic devices based on 2D-MoS2.

In this paper, transparent conducting thin films based on both undoped and vanadium (V) doped zinc oxide Zn1−xVx O (x = 3, 5, 7 at.%), were studied. The thin films were prepared using a simple low cost deposition technique called spray pyrolysis (SP). The layers were deposited onto preheated glass substrates at 450 °C. The effect of vanadium on the microstructural, the morphological and the optical properties of ZnO material was carried out using X-ray diffractometer (XRD), micro Raman spectroscope, scanning electron microscope (SEM), energy dispersive analysis by X-ray (EDX) and UV-Vis-NIR spectrophotometer. We have demonstrated that doping with 3 at.% of V enhances the crystallinity of the films by estimating the grain size value, the dislocation density and the residual stress. Also, the SEM images have demonstrated that the vanadium concentrations do effect in the thin films morphology, from hexagonal-shaped grains to rounded crystals for higher doping concentrations. The optical analysis revealed that doping with 3 at.% of vanadium shows a remarkable enhancement in the average transmittance in the visible range 89% and in the band gap energy (3.3 eV). Moreover, the disorder inside the samples was estimated using Urbach equation. Therefore, the microstructural, the morphological and the optical results approve that doping with 3 at.% of V in ZnO lattices gives interesting results for the optical window material for solar cells application.

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