Organic/inorganic hybrid solar cells have attracted much attention with simple fabrication and high performance because the combination of organic and inorganic materials compensates their disadvantages each other. This work tried to realize highly efficient hybrid solar cell based on crystalline Si and poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) junction. Performance dependences on the resistivity of Si substrate and the thickness of PEDOT:PSS layers were analyzed. Photocurrent of hybrid solar cells strongly depended on Si substrate, while overall performance depended on total resistance of hybrid solar cells not Si substrate. The charge transfer of PEDOT:PSS layer was varied by its thickness, and the 30‐nm‐thick PEDOT:PSS layer showed the best characteristics of charge transfer. The conductivity of the PEDOT:PSS layer was finally improved by solvent treatment using acetonitrile. As a result, the photovoltaic performance was much enhanced, and it was defined by 0.56 V of VOC, 30.24 mA/cm2 of JSC, 0.68 of FF, and 11.52% of efficiency.

: The silicon single crystals for semiconductor application is usually grown by Czochralski (CZ) method. This paper researches 300mm silicon Czochralski (CZ) crystal growth with CUSP magnetic field for IGBTs substrate application. The different positions of Zero-Gauss plane (ZGP) under CUSP magnetic field are simulated and compared to numerical analysis, investigated melt convection, melt flow velocity near to quartz crucible wall, diffusion boundary layer and effect of initial oxygen concentration in the silicon crystal, and the shape of solid/liquid interface was discussed. The results show that the change of the ZGP of the CMF mainly affects the convection in the melt, which leads to the difference of the thickness of the boundary layer near to the wall of the quartz crucible, and was found to be the key to reduce the oxygen dissolution from the crucible wall and oxygen diffuse into the crystal, along with the differences in the shape of the crystal-melt interface. In addition, we have carried out actual industrial single crystal production under the three configurations. The results show that the experimental data of oxygen content and shape of the crystal-melt interfaces in silicon crystal are consistent with the numerical results.