Cesium lead bromide (CsPbBr3) perovskite has recently gained significance owing to its rapidly increasing performance when used for light-emitting devices. In this study, we used density functional theory to determine the structural, electronic, and optical properties of the cubic, tetragonal, and orthorhombic temperature-dependent phases of CsPbBr3 perovskite using the full-potential linear augmented plane wave method. The electronic properties of CsPbBr3 perovskite have been investigated by evaluating their changes upon exerting spin-orbit coupling (SOC). The following exchange potentials were used: the local density approximation (LDA), Perdew–Burke–Ernzerhof generalized gradient approximation (PBE-GGA), Engel–Vosko GGA (EV-GGA), Perdew–Burke–Ernzerhof GGA revised for solids (PBEsol-GGA), modified Becke–Johnson GGA (mBJ-GGA), new modified Becke–Johnson GGA (nmBJ-GGA), and unmodified Becke–Johnson GGA (umBJ-GGA). Our band structure results indicated that the cubic, tetragonal, and orthorhombic phases have direct energy bandgaps. By including the SOC effect in the calculations, the bandgaps computed with mBJ-GGA and nmBJ-GGA were found to be in good agreement with the experimental results. Additionally, despite the large variations in their lattice constants, the three CsPbBr3 phases possessed similar optical properties. These results demonstrate a wide temperature range of operation for CsPbBr3.

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High-quality thin films were obtained directly by spin-coating glass substrates with suspensions of powdered cesium lead bromide (CsPbBr3) perovskite quantum dots (PQDs). The structural properties of the films were characterized via transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) analysis, and atomic force microscopy (AFM). The crystal structure of the CsPbBr3 PQDs was unique. The optical behavior of the CsPbBr3 PQDs, including absorption and emission, was then investigated to determine the absorption coefficient and band gap of the material. The CsPbBr3 PQDs were evaluated as active lasing media and irradiated with a pulsed laser under ambient conditions. The PQDs were laser-active when subjected to optical pumping for pulse durations of 70–80 ps at 15 Hz. Amplified spontaneous emission (ASE) by the CsPbBr3 PQD thin films was observed, and a narrow ASE band (∼5 nm) was generated at a low threshold energy of 22.25 μJ cm–2. The estimated ASE threshold carrier density (n th) was ∼7.06 × 1018 cm–3. Band-gap renormalization (BGR) was indicated by an ASE red shift and a BGR constant of ∼27.10 × 10–8 eV. A large optical absorption coefficient, photoluminescence (PL), and a substantial optical gain indicated that the CsPbBr3 PQD thin films could be embedded in a wide variety of cavity resonators to fabricate unique on-chip coherent light sources.

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