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a b s t r a c tThe size-dependent properties of small pure copper and silver clusters and their alloys with one and two palladium atoms are studied by using full-potential density functional computations. The stable isomers of these clusters are identified and their magic numbers are determined via the analysis of the second difference of their minimized energy. We discuss that the doped Pd generally prefers the high coordination sites of the pure cluster. It is argued that Pd doping influences the structural cross over of these clusters. The GW correction is applied for more accurate determination of the electronic structure of the systems.

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Standard density functional theory (DFT) approximations tend to strongly underestimate band gaps, while the more accurate GW and hybrid functionals are much more computationally demanding and unsuitable for high-throughput screening. In this work, we have performed an extensive benchmark of several approximations with different computational complexity [G0W0@PBEsol, HSE06, PBEsol, modified Becke-Johnson potential (mBJ), DFT-1/2, and ACBN0] to evaluate and compare their performance in predicting the bandgap of semiconductors. The benchmark is based on 114 binary semiconductors of different compositions and crystal structures, for about half of which experimental band gaps are known. Surprisingly, we find that, compared with G0W0@PBEsol, which exhibits a noticeable underestimation of the band gaps by about 14%, the much computationally cheaper pseudohybrid ACBN0 functional shows a competitive performance in reproducing the experimental data. The mBJ functional also performs well relative to the experiment, even slightly better than G0W0@PBEsol in terms of mean absolute (percentage) error. The HSE06 and DFT-1/2 schemes perform overall worse than ACBN0 and mBJ schemes but much better than PBEsol. Comparing the calculated band gaps on the whole dataset (including the samples with no experimental bandgap), we find that HSE06 and mBJ have excellent agreement with respect to the reference G0W0@PBEsol band gaps. The linear and monotonic correlations between the selected theoretical schemes and experiment are analyzed in terms of the Pearson and Kendall rank coefficients. Our findings strongly suggest the ACBN0 and mBJ methods as very efficient replacements for the costly G0W0 scheme in high-throughput screening of the semiconductor band gaps.

Using density-functional theory calculations, the atomic and electronic structure of single-layer WS2 attached to Zr and Co contacts are determined. Both metals form stable interfaces that are promising as contacts for injection of n-type carriers into the conduction band of WS2 with Schottky barriers of 0.45eV and 0.62eV for Zr and Co, respectively. With the help of quantum transport calculations, we address the conductive properties of a free-standing WS2 sheet suspended between two Zr contacts. It is found that such a device behaves like a diode with steep I-V characteristics. Spin-polarized transport is calculated for such a device with a floating-gate Co electrode added. Depending on the geometrical shape of the Co gate and the energy of the carriers in WS2, the transmission of spin majority and minority electrons may differ by up to an order of magnitude. Thus the steep I-V characteristics of the nanoscale device makes it possible to realize a spin filter.