InP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions.

In0.Al0.4As/Al0.4Ga0.6As quantum dots (QDs) were grown on GaAs (001) substrates by using molecular beam epitaxy utilizing a modified Stranski-Krastanow method. Atomic force microscopy images showed that the size of the In0.6Al0.4As QDs increased with increasing growth temperature. Photoluminescence spectra at 300 K showed that the exciton peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole subband (E1-HH1) of the In0.6Al0.4As/Al0.4Ga0.6As QDs shifted to large energy side with increasing growth temperature resulting from an increase in the height of the In0.6Al0.4As QDs. While the (E1-HH1) peak position of the PL spectra shifted toward larger energy side with increasing up to an annealing temperature of 700 °C, it shifted toward lower energy above 700 °C. The structural and the optical properties of In0.6Al0.4As/Al0.4Ga0.6As QDs were affected by the growth and annealing temperatures.