Graphene has rich optical and electronic properties, nincluding zero band gap, high mobility and special optical absorption properties, and it has attracted much attention. More and more investigations focus on its fundamental physical properties and electronic devices. However, many researchers believe that its true potential lies in photonics and optoelectronics, such as photodetectors, modulators and transparent conductors used in light-emitting diodes or touch screens. In this review, we summarize its applications in semiconductor photoelectric devices, mainly for telecommunications.

Metal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. Contrast experiments show that it can be removed selectively if no metal is present on the surface or if the GaAs is located far enough from the metal. Electrochemical analyses were undertaken to determine the passivation mechanism.

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