Morphological descriptors and Random Amplification of Polymorphic DNA (RAPD) technique were used to assess the genetic variation among and within forty Pennesitum glaucum accessions from Sudan. Accessions were collected from 30 villages representing Darfur, North Kordofan, South Kordofan, and Blue Nile states. 64 amplified fragments were distinguished using ten primers. 63 bands were polymorphic among the forty accessions with an average of 6.3 polymorphic bands per primer. Low level of genetic similarity was observed (4% -43%). The PhiPT (analogue of F ST fixation index) value for genetic variability obtained over the four regions was 0.169 with high significance (P = 0.01). AMOVA analysis showed higher variance components within regions (80%) than among regions (20%). The two dendrograms obtained by Random Amplification of Polymorphic DNA (RAPD) data; and morphological data based on 26 descriptors did not fit together. PCA (Principal coordinate's analysis) showed geographic structuring of pearl millet according to its growing regions in Sudan.

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The influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s -1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X-ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493 10 8 cm -3 to 59.297 10 8 cm -3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrical conductivity and Hall mobility, so they are found to change from 6.3 10 -7 ( .cm) -1 to 1.59 10 -7 ( .cm) -1 , and from 16.759 10 2 cm 2 .(V.sec) -1 to 1.675 10 2 cm 2 .(V.sec) -1 respectively, for pure and doped CdTe thin films with 4%Ag. And also the doping lead to change the kind of conductivity for thin films obtain, so we found that pure CdTe thin film is n-type and then convert to p-type when thin film doped with (2, 3, and4) %Ag.

In this study, thin film Zinc oxide (ZnO) deposited by thermal evaporation techniques on unheated glass substrates. The findings of X-ray diffraction (XRD) show that the ZnO films are amorphous before annealing. The subsequent diffraction patterns demonstrate that the films crystalline into polycrystalline mixed Tetragonal α-ZnO compounds and Orthorhombic ß-ZnO compounds. Atomic power microscope (AFM) shows that the ZnO films are of a large homogeneous surface. The median crystallite size is calculated from XRD data, which are increased for all thickness with an increasing ringing temperature and are less than the AFM data. The findings of the optical properties show that with rising annealing temperature for all thicknesses, the transmittance decreases. ZnO film shows transmittance that exceeds 95% in the IR radiation area of the spectrum at the lower thickness of 60 nm annealed at 523 K for 2 hr, but decreases to 87% percent with increasing annealing temperatures, although ZnO films with thicknesses of 130 nm annealed at 723 K for 2 hr have a transmittance of 94 % and 88 % in the IR region, but decreases High transmission in the IR area reveals that ZnO films are good materials for agricultural applications. All the prepared ZnO-thin films were n-type semiconductors and it is known that the concentration of the carriers (n) and the conductivity (σ) increased with an ever-greater annealing temperature, while their mobility (μ) and resistivity () is reduced with an increase in the annealing temperature.