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Wireless communication has become a key technology for competitiveness of next generation vehicles. Recently, the 3GPP has initiated standardization activities for LTE-based V2X services composed of vehicle-to-vehicle, vehicle-to-pedestrian, and vehicle-to-infrastructure/ network. The goal of these 3GPP activities is to enhance LTE systems to enable vehicles to communicate with other vehicles, pedestrians, and infrastructure in order to exchange messages for aiding in road safety, controlling traffic flow, and providing various traffic notifications. In this article, we provide an overview of the service flow and requirements of the V2X services LTE systems are targeting. This article also discusses the scenarios suitable for operating LTE-based V2X services, and addresses the main challenges of high mobility and densely populated vehicle environments in designing technical solutions to fulfill the requirements of V2X services. Leveraging the spectral-efficient air interface, the cost-effective network deployment, and the versatile nature of supporting different communication types, LTE systems along with proper enhancements can be the key enabler of V2X services.Hanbyul Seo and Ki-Dong Lee are with LG Electronics; Shinpei Yasukawa is with NTT DoCoMo; Ying Peng is with CATT; Philippe Sartori is with Huawei.

Ge 2 Sb 2 Te 5 thin film is a promising candidate for recording material of phase-change optical disks, and nitrogen is doped into this film to increase overwrite characteristics. In this study, the crystal structure and the microstructure of nitrogen-doped Ge 2 Sb 2 Te 5 thin film were investigated. In the annealed nitrogen-doped thin film, the characteristic face-centered cubic peaks on the X-ray diffraction pattern were broadened and shifted to a smaller angle with the increase of nitrogen content. In addition, a remarkably reduced grain size and a highly strained structure are seen in the transmission electron microscopy image. Doped nitrogen in Ge 2 Sb 2 Te 5 thin film plays two roles. One is to distort the crystal lattice and induce a strain field in the film. The other is to refine the grain size of the film through precipitation. The crystal lattice is transformed from face-centered cubic to a hexagonal structure in nitrogen content above 20 at.%.

The thermal conductivity of sputtered amorphous-Ge2Sb2Te5 (a-GST)/ZnS:SiO2 and crystalline-Ge2Sb2Te5 (c-GST)/ZnS:SiO2 multilayer films has been measured in the temperature range between 50 and 300 K using the 3ω method. The conductivity data in the direction of the cross plane of the films showed lower values than the series conductance of the constituent layers, which was calculated from the thermal conductivity of thick a-GST, c-GST, and ZnS:SiO2 films measured independently. From the reduction in the multilayer thermal conductivity, the thermal boundary resistance at the interface between GST and ZnS:SiO2 films was calculated. The boundary resistance in the c-GST multilayer was lower than that for the a-GST case in the whole measured temperature region.