Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

The weak van der Waals interlayer interactions in the transition metal dichalcogenide (TMD) materials have created a rich platform to study their exotic electronic properties through chemical doping or physical gating techniques. We reported bulk superconductivity up to 7.6 K through careful manipulation of the charge carrier density and interlayer spacing d in the chemically intercalated two dimensional 1T-SnSe2 phase. We found, for the first time in the two dimensional SnSe2, that polar organic molecules cointercalated with the alkali metal Li into the basal layers, thus significantly enhancing the superconducting Tc. We observed that the Tc scales with the basal spacing distance, meanwhile being almost independent of x in Lix(THF)ySnSe2 system. Our results offers a new general chemical route to study the rich electron correlations and the interplay of charge density wave and unconventional superconductivity in the two dimensional material.

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