, Low-temperature growth of dense and hard Ti0.41Al0.51Ta0.08N films via hybrid HIPIMS/DC magnetron co-sputtering with synchronized metalion irradiation, Journal of Applied Physics, 121(17). https://dx

Ti-B-Si-Al-N coatings were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti 33 Al 67 , Ti 85 Si 15 , and TiB 2 cathodes in a reactive N 2 atmosphere. The microstructure of the as-deposited coatings changes from nanocrystalline to amorphous with addition of (B+Si+Al), or high amounts of (B+Si) to TiN. In the as-deposited state, the 4 µm-thick amorphous coatings are dense and homogenous, besides slight compositional modulation with Ti-rich layers induced by rotation of the substrate holder fixture during deposition, and have unusually few macroparticles. Annealing at temperatures ranging from 700• C to 1100• C results in that the coatings crystallize by clustering of TiN grains. The hardness of as-deposited amorphous coatings is 17-18 GPa, and increases to 21 GPa following annealing at 800• C. At annealing temperatures of 1000• C and above the hardness decreases due to inter-diffusion of Co from the substrate to the coating.

Ti 1−x−y Al x Si y N z (0.02≤x≤0.46, 0.02≤y≤0.28, and 1.08≤z≤1.29) thin films were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti-Al, Ti-Si, and Ti-Al-Si cathodes in a N 2 atmosphere. The microstructure of the as-deposited films changes from nanocrystalline to amorphous by addition of Al and Si to TiN. Upon incorporation of 12 at% Si and 18 at% Al, the films assume an x-ray amorphous state. Post-deposition anneals show that the films are thermally stable up to 900