AlN thin film transducers for high temperature non-destructive testing applications J. Appl. Phys. 111, 074510 (2012) Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing Appl. Phys. Lett. 100, 143501 (2012) Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates Appl. Phys. Lett. 100, 132905 (2012) Sub-diffraction-limit semiconductor resonators operating on the fundamental magnetic resonance Appl. Phys. Lett. 100, 131113 (2012) Additional information on J. Appl. Phys. We have systematically investigated the effects of high-temperature annealing on ZnO and ZnO devices using current voltage, deep level transient spectroscopy (DLTS) and Laplace DLTS measurements. Current-voltage measurements reveal the decrease in the quality of devices fabricated on the annealed samples, with the high-temperature annealed samples yielding devices with low barrier heights and high reverse currents. DLTS results indicate the presence of three prominent defects in the as-received samples. Annealing the ZnO samples at 300 C, 500 C, and 600 C in Ar results in an increase in reverse leakage current of the Schottky contacts and an introduction of a new broad peak. After 700 C annealing, the broad peak is no longer present, but a new defect with an activation enthalpy of 0.18 eV is observed. Further annealing of the samples in oxygen after Ar annealing causes an increase in intensity of the broad peak. High-resolution Laplace DLTS has been successfully employed to resolve the closely spaced energy levels. V C 2012 American Institute of Physics. [http://dx

We report on in situ space charge spectroscopy measurements on low‐temperature 1.6thinmathspaceMeV proton‐bombarded n‐type gallium nitride thin film samples. The scope of this study was to investigate the introduction and annealing dynamics of radiation‐induced lattice damage. Using optical excitation allowed for the detection of electronic defect states in the entire GaN bandgap and to detect unstable primary defects that would have been invisible in thermal space charge spectroscopic measurements. The introduction of compensating acceptor‐like primary defects by the bombardment was observed and manifested as a decrease in the sample capacitance. After the bombardment the concentrations of deep‐levels and acceptor states were monitored by deep‐level transient spectroscopy and photo‐capacitance measurements while the temperature was increased. It was found that annealing and reactions of primary bombardment‐induced defects occurs even below room‐temperature which might account for the radiation‐hardness of GaN.

Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An up to now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K.