Epitaxial (001) diamond film were grown on mirror-polished single-crystalline (001) silicon substrates by microwave plasma chemical vapor deposition from a methane/hydrogen gas mixture. The films were characterized by means of scanning electron microscopy, Raman spectroscopy, and x-ray analysis. The results show that the diamond crystallites are oriented to the silicon substrate with both the (001) planes and the [110] directions parallel to the silicon substrate.

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