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Tungsten coatings were deposited on silicon substrates by radio frequency (rf) magnetron sputtering from a metallic target in Ar atmosphere. The process parameters during the sputtering process were evaluated by a Langmuir probe, particularly, the electron density and electron temperature were measured by changing the rf power and gas pressure. The morphological and structural properties of the coatings were studied as a function of the pressure. Significant correlations were found between process parameters and characteristics properties of W coatings. The influence of deposition parameters on electrical properties was investigated. The electrical resistivity of the coatings was increased from 1.3 × 10−6 to 3 × 10−5 Ω m as the pressure increased as well.