Conductive oxides are considered to be attractive electrodes in electronic applications such as piezoelectric, energy storage, and semiconductor devices due to their good electrical conductivity and compatibility with other functional oxides. However, conductive oxides are generally brittle, which limits their applications in flexible electronic devices. Here, freestanding single-crystal SrRuO 3 membranes have been prepared by etching a sacrificial layer. The prepared membranes can be buckled into sinusoidal shapes of different sizes, indicating that the membranes are super-flexible. The mechanical properties were performed on the well-strained membranes, and the Young's modulus of the 12 nm-thick SrRuO 3 membrane was found to be 34.65 GPa via the buckling method, which is approximately 21% of the bulk SrRuO 3 . The corresponding super-flexibility mechanism is attributed to the high defect density and small specific surface area. The SrRuO 3 films maintain the resistivity before and after transferring in the range of 1.4 × 10 −4 to 5.2 × 10 −4 Ω cm that can be used as electrode materials. This work provides a realistic strategy for the superflexibility transition of the single-crystal SrRuO 3 conductive oxide membranes from brittleness, which paves the way for their application in flexible electronics devices.

Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2D IVA metal chalcogenide semiconductors (GIVMCs, metal = Ge, Sn, Pb; chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional (2D) tin sulfide (SnS) nanosheets using the physical vapor deposition (PVD) method and fabricated a 2D SnS visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A⋅W−1 and possesses an external quantum efficiency of 4.45 × 104%, as well as a detectivity of 1.15 × 109 Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 mW⋅cm−2, the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2D SnS can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs, prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.

In microelectromechanical systems, F-P cavity is one of the most common structures, air cavity thickness of a F-P cavity is about a near wavelength, the thickness of the air cavity is less and the interference series is low, so the reflective phases of the reflectors have much influence on the peak wavelength. The linear relationship between the thickness of an air cavity in a tunable filter and the resonant wavelength is deduced and tested by numerical computation in the article. The research is of practical significance for the design of a F-P cavity tunable wavelength selector.