Backscattering suppression in silicon-on-insulator (SOI) is one of the central issues to reduce energy loss and signal distortion, enabling for capability improvement of modern information processing systems. Valley physics provides an intriguing way for robust information transfer and unidirectional coupling in topological nanophotonics. Here we realize topological transport in a SOI valley photonic crystal slab. Localized Berry curvature near zone corners guarantees the existence of valley-dependent edge states below light cone, maintaining in-plane robustness and light confinement simultaneously. Topologically robust transport at telecommunication is observed along two sharp-bend interfaces in subwavelength scale, showing flat-top high transmission of ~10% bandwidth. Topological photonic routing is achieved in a bearded-stack interface, due to unidirectional excitation of valley-chirality-locked edge state from the phase vortex of a nanoscale microdisk. These findings show the prototype of robustly integrated devices, and open a new door towards the observation of non-trivial states even in non-Hermitian systems.

Integral imaging is a promising three-dimensional (3D) imaging technique that captures and reconstructs light field information. Microlens arrays are usually used for the reconstruction process to display 3D scenes to the viewer. However, the inherent chromatic aberration of the microlens array reduces the viewing quality, and thus, broadband achromatic imaging remains a challenge for integral imaging. Here, we realize a silicon nitride metalens array in the visible region that can be used to reconstruct 3D optical scenes in the achromatic integral imaging for white light. The metalens array contains 60 × 60 polarization-insensitive metalenses with nearly diffraction-limited focusing. The nanoposts in each high-efficiency (measured as 47% on average) metalens are delicately designed with zero effective material dispersion and an effective achromatic refractive index distribution from 430 to 780 nm. In addition, such an achromatic metalens array is composed of only a single silicon nitride layer with an ultrathin thickness of 400 nm, making the array suitable for on-chip hybrid-CMOS integration and the parallel manipulation of optoelectronic information. We expect these findings to provide possibilities for full-color and aberration-free integral imaging, and we envision that the proposed approach may be potentially applicable in the fields of high-power microlithography, high-precision wavefront sensors, virtual/augmented reality and 3D imaging.

Topological photonics has been introduced as a powerful platform for integrated optics, since it can deal with robust light transport, and be further extended to the quantum world. Strikingly, valley-contrasting physics in topological photonic structures contributes to valley-related edge states, their unidirectional coupling, and even valley-dependent wave-division in topological junctions. Here, we design and fabricate nanophotonic topological harpoon-shaped beam splitters (HSBSs) based on 120-deg-bending interfaces and demonstrate the first on-chip valley-dependent quantum information process. Two-photon quantum interference, namely, Hong-Ou-Mandel (HOM) interference with a high visibility of 0.956 ± 0.006, is realized with our 50/50 HSBS, which is constructed by two topologically distinct domain walls. Cascading this kind of HSBS together, we also demonstrate a simple quantum photonic circuit and generation of a path-entangled state. Our work shows that the photonic valley state can be used in quantum information processing, and it is possible to realize more complex quantum circuits with valley-dependent photonic topological insulators, which provides a novel method for on-chip quantum information processing.

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Metagratings have been shown to form an agile and efficient platform for extreme wavefront manipulation, going beyond the limitations of gradient metasurfaces. Here, we theoretically show perfect unitary diffraction in...