BACKGROUND AND OBJECTIVES: Children with Down syndrome (DS) are at significant risk for respiratory syncytial virus (RSV) infection and related hospitalization. We compared hospitalization rates due to respiratory tract infection in children with DS aged <2 years who prospectively received palivizumab during the RSV season with a previously published, similar untreated DS birth cohort. METHODS: A total of 532 children with DS who prospectively received palivizumab were assembled from the prospective Canadian RSV Evaluation Study of Palivizumab registry between 2005 and 2012. The untreated group included 233 children with DS derived from a nationwide Dutch birth cohort from 2003 to 2005. Events during the RSV seasons were counted. Poisson regression analysis was performed to compare incidence rate ratios (95% confidence intervals [CIs]) between groups while controlling for observation length and known risk factors for severe RSV infection. RESULTS: In total, 31 (23 untreated, 8 treated) RSV-related hospitalizations were documented. The adjusted risk of RSV-related hospitalizations was higher in untreated subjects than in palivizumab recipients (incidence rate ratio 3.63; 95% CI, 1.52–8.67). The adjusted risk of hospitalization for all respiratory tract infection (147 events; 73 untreated, 74 treated) was similar (incidence rate ratio untreated versus palivizumab 1.11; 95% CI, 0.80–1.55). CONCLUSIONS: These results suggest that palivizumab is associated with a 3.6-fold reduction in the incidence rate ratio for RSV-related hospitalization in children with DS during the first 2 years of life. A randomized trial is needed to determine the efficacy of RSV immunoprophylaxis in this specific high-risk patient population.
Flexible transparent electrodes (FTEs) with embedded metal meshes play an indispensable role in many optoelectronic devices due to their excellent mechanical stability and environmental adaptability. However, low-cost, simple, efficient, and environmental friendly integrated manufacturing of high-performance embedded metal meshes remains a huge challenge. Here, a facile and novel fabrication method is proposed for FTEs with an embedded metal mesh via liquid substrateelectric-field-driven microscale 3D printing process. This direct printing strategy avoids tedious processes and offers low-cost and high-volume production, enabling the fabrication of high-resolution, high-aspect ratio embedded metal meshes without sacrificing transparency. The final manufactured FTEs with 80 mm × 80 mm embedded metal mesh offers excellent optoelectronic performance with a sheet resistance (R s ) of 6 𝛀 sq −1 and a transmittance (T) of 85.79%. The embedded metal structure still has excellent mechanical stability and good environmental suitability under different harsh working conditions. The practical feasibility of the FTEs is successfully demonstrated with a thermally driven 4D printing structure and a resistive transparent strain sensor. This method can be used to manufacture large areas with facile, high-efficiency, low-cost, and high-performance FTEs.
Transparent glass with metal mesh is considered a promising strategy for high performance transparent glass heaters (TGHs). However, the realization of simple, low‐cost manufacture of high performance TGHs still faces great challenges. Here, a technique for the fabrication of high performance TGHs is proposed using liquid sacrificial substrate electric‐field‐driven (LS‐EFD) microscale 3D printing of thick film silver paste. The liquid sacrificial substrate not only significantly improves the aspect ratio (AR) of silver mesh, but also plays a positive role in printing stability. The fabricated TGHs with a line width of 35 µm, thickness of 12.3 µm, and pitch of 1000 µm exhibit a desirable optoelectronic performance with sheet resistance (Rs) of 0.195 Ω sq−1 and transmittance (T) of 88.97%. A successful deicing test showcases the feasibility and practicality of the manufactured TGHs. Moreover, an interface evaporator is developed for the coordination of photothermal and electrothermal systems based on the high performance TGHs. The vapor generation rate of the device reaches 10.69 kg m−2 h−1 with a voltage of 2 V. The proposed technique is a promising strategy for the cost‐effective and simple fabrication of high performance TGHs.
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