No abstract

Record-low contact resistivity (ρ c ) for n-Si, down to 1.5×10 -9 Ω•cm 2 , is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the ρ c for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the ρ c reduction. In situ doped Si:P with P concentration of 2×10 21 cm -3 is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiO x based metal-insulator-semiconductor (MIS) contact is also studied on Si:P but is found to suffer from low thermal stability.

No abstract

No abstract