The low-temperature annealing process has a critical impact on the electrical performance of thin-film transistors (TFTs). This paper reports significant performance enhancements of TFTs using a femtosecond laser pre-annealing (FLA)-based preparation method. The solution-processed In2O3 films were fabricated by FLA at various laser irradiation times and then annealed on a hot-plate at 230 ℃. When the FLA time was set to 30 s, the device exhibited high saturation mobility of 10.03 ± 0.64 cm 2 /Vs, Ion/Ioff of 3.4 × 10 5 , low VTH of 0.14 ± 0.64 V, and small SS of 1.44 ± 0.37 V/dec. The FLA process improved the formation of M-O lattices effectively, which led to an improvement in mobility. Furthermore, the gate-bias-stress stability and time-dependent environmental stability were improved considerably by the FLA process. These results show that high-performance In2O3 TFTs can be prepared at low temperatures using FLA-centered annealing technology. This work suggests that the FLA preparation method has tremendous potential for the fabrication of low-cost, high performance, and flexible TFT devices.INDEX TERMS In2O3, thin-film transistors, solution process, femtosecond laser, low-temperature, annealing process.

A structurally engineered memristor architecture based on metal‐oxide materials has lasting significance for the nonvolatile and high storing velocity of next‐generation nonvolatile memories. A memristor device based on multi‐stacked indium zinc oxide (IZO) structure is fabricated using a solution process. An Al/three‐multi‐stacked IZO/TiO2/Al memristor device is fabricated with an In/Zn solution molar ratio of 7:3 with a repetitious spin‐coating and annealing process. The amorphous TiO2 layer is prepared by atomic layer deposition with a low deposition temperature of 200 °C. The layers of IZO thin films in the memristor are raised from a single layer to three layers for intentional control of the concentration of oxygen vacancies, which play an important role in improving the electrical performance of memristor devices. The memristor exhibits uniform and reproducible resistance switching behavior with low‐resistance state (LRS) and high‐resistance state (HRS) voltage sweeps and shows excellent retention performance. The resistive switching phenomenon for an Al/multi‐stacked IZO/TiO2/Al memristor device is explained from an analysis of the current–voltage characteristics and the impact of various IZO layers. This study also suggests that some other appropriate metal oxide thin films with good resistive‐switching performance can be used to prepare structurally enhanced memristor devices.

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