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Silicon carbide (SiC) device has become the primary choice for high-efficiency power electronic equipment due to its excellent performance. However, its higher switching frequency and faster switching speed have also incurred new challenges, such as low parasitic inductance packaging. Despite a significant amount of literature to overview the low parasitic inductance packages, most of them focus on total parasitic inductance from different packaging technology. Here, from the viewpoint of partial inductance which includes gate loop, power loop and common source, the designs for different inductances are surveyed. The power loop is further discussed from power terminals, bonding wires and direct bonded copper (DBC) conductor traces. The effects and sources of these inductances are analyzed. Furthermore, the typical design solutions to reduce the inductances are summarized. Finally, the challenges of SiC packages are presented.

In order to effectively control the type and height of Schottky barrier, it is crucial to appropriately select the material and method of controlling the type and height of the Schottky barrier effectively. Two-dimensional materials exhibit massive potential in research and development due to their unique electrical, optical, thermal and mechanical properties. Graphene is a two-dimensional material found earliest, which has many excellent properties, such as high carrier mobility and large surface area. However, single-layered graphene has a zero band gap, which limits its response in electronic devices. Unlike the graphene, the transition metal sulfides have various band structures and chemical compositions, which greatly compensate for the defect of zero gap in graphene. From among many two-dimensional transition metal sulfides, we choose WSe₂. The reason is that the single-layered WSe₂ possesses the photoelectric excellent performance, band gap that can meet the majority of requirements in electronic and photoelectric devices, and transport properties that can be adjusted to p-type or bipolar which is first found in semiconductor materials. And compared with metal, the graphene at room temperature has superior properties such as high electron mobility, resistivity of 10^-6 Ω·m lower than copper and silver, coefficient of thermal conductivity 5300 W/(m·K) large than 10 times that of copper, aluminum and other metal, and hardness exceeding the diamond, fracture strength up to 100 times more than that of iron and steel. The Two-dimensional semiconductors along with semimetallic graphene are seen as the basic building blocks for a new generation of nanoelectronic devices, in this sense, the artificially designed transition metal sulfide heterostructure is a promising option for ultrathin photodetectors. At present, most researchers focus on the control of the type and height of Schottky via heterojunction doped metallic element. However, there are few Schottky that are doped by nonmentallic element. Therefore, our work provides the interaction between WSe₂ and graphene, which are described by the first principles effectively. The results show that there is the van der Waals interaction between the interface of WSe₂ and that of graphene, and thus forming a stable structure. Through the analysis of energy band, it is found that the semiconductor properties of WSe₂ are changed by the coupling between WSe₂ and graphene, making the WSe₂ transform from direct band gap into indirect band gap semiconductor. Furthermore, the total density of states and corresponding partial density of states of WSe₂/graphene heterostructure are investigated, and the results show that the valence band is composed of hybrid orbitals of W 5d and Se 4p, whereas the conduction band is comprised of W 5d and C 2p orbitals, the orbital hybridization between W 5d and Se 4p will cause the photo generated electrons to transfer easily from the internal W atoms to the external Se atoms, thereby forming a build-in internal electric field from graphene to WSe₂. Finally, for ascertaining the effect of doping WSe₂ with nonmetallic elements, the WSe₂/graphene Schottky is investigated by using the plane-wave ultrasoft pseudo potentials in detail. Besides, the lattice mismatch rate and lattice mismatch can prove the rationality of doping WSe₂ by non-metallicelement. The stability of the combination between the doped WSe₂ and graphene is demonstrated by the interface binding energy. The influence of nonmetallic atoms on WSe₂ is analyzed before investigating the heterojunction of the doped WSe₂ and graphene. The results show that the band gap of WSe₂ doped by O atoms changes from 1.62 to 1.66 eV and the leading band moves upward by 0.04 eV. This indicates that O atom doping has little effect on the band gap of WSe₂. When WSe₂ is doped with N and B atoms, the impurity energy level appears near the Fermi level of WSe₂, which results in the band gap being zero, and then it presents severe metallization. This is due to the Fermi level of WSe₂ shifting. When the C atom is doped, the impurity level appears at the bottom of the guide band of WSe₂, and the band gap is 0.78 eV. Furthermore, we analyze the effect of doping on heterojunction. In the W₉Se₁₇O₁/graphene heterojunction, the Schottky barrier height of n-type and p-type are 0.77 eV and 0.79 eV respectively. It shows that the heterojunction type transforms form p-type into n-type, whose Schottky barrier height is reduced effectively. Due to the W₉Se₁₇N₁ as well as W₉Se₁₇B₁ with metallic properties combining with graphene, the Fermi energy level of graphene is shifted, its Dirac point is located above the Fermi energy level and its conduction band has a filling energy level. When doped with N and B atoms, WSe₂/graphene belongs to the type of ohmic contact. When W₉Se₁₇C₁ contacts the graphene, the graphene Dirac point is on the Fermi surface, and the Fermi energy level of W₉Se₁₇C₁ is shifted by 0.59 eV. And then, the height of Schottky barrier of type-n for the heterojunction is 0.14 eV, the height of type-p is 0.59 eV and overall type of heterojunction is type-n. Therefore, by doping WSe₂ with O, N, C and B, the WSe₂/graphene Schottky type and barrier height can be adjusted. These will provide guidance for designing and manufacturing the 2D FET.

This paper proposes a novel floating high-voltage level shifter (FHV-LS) with the pre-storage technique for high speed and low deviation in propagation delay. With this technology, the transmission paths from input to output are optimized, and thus the propagation delay of the proposed FHV-LS is reduced to as low as the sub-nanosecond scale. To further reduce the propagation delay, a pull-up network with regulated strength is introduced to reduce the fall time, which is a crucial part of the propagation delay. In addition, a pseudosymmetrical input pair is used to improve the symmetry of FHV-LS structurally to balance between the rising and falling propagation delays. Moreover, a start-up circuit is developed to initialize the output state of FHV-LS during the VDDH power up. The proposed FHV-LS is implemented using 0.3-µm HVCMOS technology. Post-layout simulation shows that the propagation delays and energy per transition of the proposed FHV-LS are 384 ps and 77.7 pJ @VH = 5 V, respectively. Finally, the 500-points Monte Carlo are performed to verify the performance and the stability.

The direct Z-scheme van der Waals（vdW）heterojunctions based on biomimetic artificial photosynthesis are a promising strategy for enhancing photocatalytic activity. Therefore, the search for superior direct Z-scheme photocatalysts is an urgent...