This paper presents an experimental study of the dynamic and static characteristics of SiC Power MOSFETs in a total ionizing dose radiation environment. Their relationship has also been studied. Furthermore, the factors and mechanisms that affect the switching characteristics of SiC Power MOSFET in a total dose radiation environment are discussed. The change of switching characteristics of SiC VDMOS induced by radiation depends not only on the trapped charge accumulated at the interface and gate oxide above the channel but is also strongly dependent on the parasitic capacitance of the device. The former causes the negative shift of the threshold voltage to decrease the turn-on time and increase the turn-off time, while the latter increases both the turn-on time and turn-off time. The results of the study show that the static and dynamic performance of SiC power MOSFET must be considered simultaneously in the total dose radiation damage assessment and radiation hardening. Namely, the static characteristic represented by the threshold voltage and the dynamic characteristic represented by the turn-off time.

Different switching frequencies are required when SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are switching in a space environment. In this study, the total ionizing dose (TID) responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz. A significant shift was observed in the threshold voltage as the frequency increased, which resulted in premature failure of the drain–source breakdown voltage and drain–source leakage current. The degradation is attributed to the high activation and low recovery rates of traps at high frequencies. The results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs.

Firstly an embedded 55-nm Flash design based on split-gate Flash bitcell is proposed by 32KX64 IP. It demonstrates competitive features for production by wide voltage supply range (VDD=0.86~1.32V, and VD25=1.6~3.6V), low-power read feature (96uA/MHz, 64 bits), fast wake-up time from power off (< 2us), and fast operation read speed up to 75MHz (VDD=1.08V).

The Infrasonic Monitoring Network (IMN) in China is under construction to detect, identify and located the signals generated by natural disasters. Presently, fifteen sensors are operational and transmitting real time data to Central Data Centre (CDC) in Beijing. Each sensor station is composed of one infrasonic sensor, one humidity and temperature sensor, one digital sampling and transmitting device, which collects and delivers real-time continuous infrasonic, temperature, humidity, GPS raw data to CDC. IMN is designed as a robust sensor network optimized for rapid deployment and provides long-term information monitoring; the system supports data acquisition with GMT time and is remotely configurable. Its high performance has been demonstrated in the initial deployment experience and preliminary analysis of sampling data.