An analytical method for concurrent analysis of inorganic anions and cations has been developed using a capillary electrophoresis (CE)-capacitively coupled contactless conductivity detector (C 4 D) system. Although hydrodynamic and electrokinetic injection techniques have been widely used in CE, we employed a capillary filling method (CFM) for the analysis of inorganic ions. The procedure is relatively simple and has the advantage that CMF does not require pressure control and vial exchange. Three anions (chloride, sulfate, nitrate) and five cations (ammonium, potassium, sodium, magnesium, calcium) were successfully separated and detected at ppm levels within 80 s using a 9 mM histidine/15 mM malic acid (pH 3.6) containing 50 mM N-dodecyl-N,N-dimethyl-3-ammonio-1-propanesulfonate as background electrolyte. Applying this analytical condition, the electroosmotic flow is negligible and anions and cations were migrated concurrently to different polarities according to their electrophoretic mobility. Obtained raw data showed stepwise increases in detected conductivity due to the migration of sample components, which expresses as peak profiles by differentiation of electropherograms. The RSD values of the peak area and migration times for the anions and cations were satisfactory and were less than 5.15 and 2.04%, respectively. The developed method was applied for the analysis of inorganic anions and cations in commercial mineral waters, tap water, urine, and exhaled breath condensate. These results indicate that the CE-C 4 D system with CFM is suitable for the rapid analysis of inorganic anions and cations in various samples. Keywords Capillary electrophoresis (CE), capacitively coupled contactless conductivity detector (C 4 D), capillary filling method (CMF), water analysis

Abstract-Si has been widely used as primary semiconductor materials for electronic device fabrication. Due to the limitation of its electrical properties such as electron and hole mobilities, however, Ge would be one of the candidates for future electronic device materials because of its higher mobilities of both carriers. However, since GeO 2 which composed of Ge-O chemical bonds is known to have water solubility and it reacts with Ge substrates at high temperature, it is well known that GeO desorption occurs at GeO 2 /Ge interface during higher temperature annealing, as well as during the course of higher temperature oxidation process itself. In this research, we attempted to improve interface characteristics by depositing Hf on the GeO 2 /Ge structure and applying heat treatment (PMA: Post Metallization Annealing). As a result, it is clearly shown that the decrease of D it value by the PMA, and the leakage current was reduced and insulating property was improved by applying PMA. We consider that a slight amount of Hf buried the GeO 2 film by Hf-PMA and the bonding strength of Ge-O became stable. It was confirmed that Hf-PMA is effective for GeO2/Ge stacked structure as a solution to reduce the D it values.

Si has been widely used as the primary semiconductor material for electronic device fabrication. Due to the limitation of its electrical properties such as electron and hole mobilities, however, Ge would be one of the candidates for future electronic device materials because of its higher mobilities of both carriers. However, GeO2 is known to suffer from water solubility and its reaction with the Ge substrate to cause GeO desorption at high temperature. In this research, we attempted to improve interface characteristics by depositing Hf on the GeO2/Ge structure and applying heat treatment (PMA: Post Metallization Annealing). As a result, it is clearly shown that PMA treatment for appropriate thicknesses of the deposited Hf-metal film reduces both the Dit (interface trap density) and the leakage current, and also improves the insulating properties. Thus it was confirmed that Hf-PMA is an effective solution to reduce the D it values for GeO2/Ge stacked structures.