This paper presents two novel on-chip bandstop to bandpass reconfigurable filters in C and X bands. Designed on a silicon substrate, filter reconfigurability is achieved using semiconductor-distributed doped areas (ScDDAs), such as an N+PP+ junction integrated into the substrate. The active element is therefore co-designed with the passive parts, allowing flexibility in ScDDA size and position. This flexibility offers advantages in terms of integration, ease of manufacture, and performance. The synthesis was developed in the OFF-state in order to match with the well-known one in the ON-state. As proof of concept, 5 GHz and 10 GHz filters were built. The simulated and measured results showed good agreement in both bandpass and bandstop configurations.

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In this paper, a resonator and second order filter are fabricated using a novel technological process based on micromachining and thermo-diffusion. The use of this innovative process opens the way to the design of RF components relying on partially air-filled Substrate Integrated Waveguides (SIW). These topologies and particularly the proposed partially air-filled pedestal SIW resonator is suitable to design high-Q, yet compact SIW resonators. In this paper, a study of partially air-filled pedestal SIW resonator is proposed to offer an optimized trade-off between Q-factor and compactness. Then, based on this study, a partially air-filled pedestal resonator working at 5 GHz is designed and manufactured. The measured prototype exhibits a Q-factor of 285, which represents a 53 % increase in Q-factor compared to a fully dielectrically-filled-in pedestal SIW resonator, while the size is kept constant. Finally, a second order filter based on this resonator topology is also designed, measured and discussed.

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