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Full-potential augmented plane waves (FP-APW) method is applied to determine the electronic band profiles and magneto-electronic properties of XCu2P2 (X = Ca, Sr) compounds. We have adopted Perdew, Burke and Ernzerhof's generalized gradient approximation (PBE-GGA) along with GGA plus Hubbard U parameter method (GGA+U) as exchange correlation potentials. The physical properties of interest for XCu2P2 (X = Ca, Sr) compounds were analyzed for the first time in the Zintl phase of tetragonal structure with space group I4/mmm (No. 139). From the structural parameters we have found that ferromagnetic phase is more stable as compared to paramagnetic and antiferromagnetic phase. Electronic band profiles predict the metallic nature of these compounds in FM phase. The projected densities of states computed in this work recognize that the bonding is accomplished through hybridization of Cu-3d with P-p states. The evaluated magnetic moments support weak ferromagnetism in these compounds. The compounds of interest are thermodynamically stable. In addition, the cohesive energies and Curie temperatures of the studied compounds were also predicted. Metallic and ferromagnetic nature of XCu2P2 (X = Ca, Sr) compounds predict the important of these compounds in spintronic devices.

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Semiconductors are the backbone of the optoelectronic industry. Direct band gap materials in the visible energy region are highly desirable for the efficient optoelectronic applications. In this work, we have probed the structural, electronic and optical properties of Mg-IV-V2 (IV[Formula: see text]Si, Ge, Sn and V[Formula: see text]P, As) compounds by FP-LAPW calculations, based on density functional theory. Their crystal structure is chalcopyrite with space group of I-42d. The lattice constants of MgSiP2, MgSiAs2 and MgGeAs2 are consistent with experimental results. These compounds show semiconductor behavior with direct band gap ranging from 1.3–2.15[Formula: see text]eV. Optical properties were also investigated. Optical properties include real and imaginary parts of dielectric constant, energy loss function, refraction and reflection. Direct band gap nature and good response in the visible region of these compounds predict their usefulness in optoelectronic devices.