Li metal anodes are among the most promising options for next-generation batteries, exhibiting the highest theoretical capacity. However, irregular Li electrodeposition, which raises safety concerns, is a major obstacle in practical applications. Therefore, a fundamental understanding of the beginning phases of Li plating, such as nucleation and early growth, which have a decisive influence on the dendritic growth of Li, is essential. In this study, we investigated the early stage of Li plating at the single-particle level and its correlation with the solid-electrolyte interphase (SEI) using in situ liquid phase transmission electron microscopy (TEM) and cryogenic TEM. We observed contrasting nucleation dynamics and particle growth patterns in two electrolytes (1 M LiPF 6 in ethylene carbonate/diethyl carbonate and 1 M LiTFSI in 1,3dioxolane/dimethoxy ethane), which originate from different chemical and physical properties of the SEIs. Based on our findings, we propose a mechanism of nucleation and initial growth of Li dictated by the SEI.

The recently discovered ferroelectricity in thin-film orthorhombic HfO2, which can be directly integrated into complementary metal–oxide semiconductor technology, has become an important research target. However, the use of orthorhombic HfO2 in practical devices has been limited by undesirable mixing with the monoclinic phase, which is nonpolar and thus degrades the ferroelectric properties. Here, we demonstrate that a Si dopant significantly stabilizes the ferroelectric phase because of its unique bonding characteristics, particularly its intrinsic tendency to form strong covalent bonds with O, thereby weakening the phase boundary to stabilize the ferroelectric orthorhombic phase over the nonpolar monoclinic phase, relatively. On the basis of our theoretical predictions, we conducted transmission electron microscopy measurements and confirmed that Si substitution doping indeed induced monoclinic structural components into the orthorhombic phase, which is a strong indication of the weakened phase boundary and subsequent facilitation of the ferroelectric transition. This work thus provides an atomic-scale picture for understanding the unique role of Si in promoting the ferroelectric phase and the dopant dependence on the wake-up effect in HfO2, offering a substantial advancement toward integrating ferroelectrics into practical devices.