In this work, we report the enhancements in the structural, optical and dielectric properties of molybdenum trioxide that are achieved by insertion of 50 and 100 nm thick indium sheets between layers of MoO3. The films which are coated onto ultrasonically glass substrates under a vacuum pressure of 10-5 mbar exhibited metal induced crystallization process upon insertion of indium sheets. Optically, indium sheets tuned the transmittance and reflectance, significantly, increased the absorption coefficient values and formed interbands in the band gap of MoO3. The energy band gap decreased with increasing indium sheets thickness. On the other hand, the insertion of indium layers into the structure of MoO3 is observed to improve the dielectric response of these films to values that nominate them for used in thin film transistor technology. In the same context, the analyses of the optical conductivity which are carried out with the help of Drude-Lorentz approach have shown that the presence of indium sheets can increase the optical conductivity and enhance the plasmon frequency and free charge carrier density of MoO3. The plasmon frequency is tuned in the range of 1.68-7.16 GHz making MoO3 films attractive for plasmonic applications.

In this study, the effects of Au nanosheets of thicknesses of 50 nm on the structural, electrical and photoelectrical properties of Yb/ZnS/CdS/Au (ZAC-0) devices is considered. Stacked layers of ZnS and CdS which are prepared by the thermal evaporation technique onto Yb substrates under vacuum pressure of 10-5 mbar exhibits rectifying characteristics. For these diodes a reverse to forward current ratios of ~105 at biasing voltage of 0.60 V is determined. Insertion of Au nanosheets between the stacked layers of ZnS and CdS increased the current values by three orders of magnitude and changed the current conduction mechanism from thermionic emission to tunneling under reverse biasing conditions. The ZAC-0 device, exhibit a barrier height lowering and barrier widening upon insertion of Au nanosheets. After the participation of Au nanosheets in the structure of the ZAC-0 devices, large photosensitivity and responsivity accompanied with high external quantum efficiency is observed. The responsivity to 406 nm laser radiation is biasing voltage dependent and reaches 135 mA/W at 0.60 V. The features of the Yb/ZnS/Au/CdS/Au photosensors nominate them as promising candidates for use in light communication technology as signal receivers.