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Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

The mechanism of high stress in silicon nitride thin film is studied systematically in this paper. The effects of the various process parameters on the stress in silicon nitride thin film deposited by PECVD are analyzed and discussed. The silicon nitride thin film with high compressive and tensile stress has been deposited on the optimized process parameters and the compressive and tensile stress are up to-1.38GPa and 866MPa, respectively. Finally, the method of further improving the stress in silicon nitride thin film is presented.