Thin films of gallium oxide (Ga 2 O 3 ) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal-organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non-pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280-300 8C with a growth rate of $0.3 Å per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga 2 O 3 , films are grown in the temperature range 450-6258C with the apparent activation energy of 225.5 kJ mol À1. This study shows that DMGIP can be utilized as a new source for the preparation of Ga 2 O 3 thin films.

Dimethylgallium isopropoxide, Me2GaOiPr, is a gallium analogue of the volatile aluminum source dimethylaluminum isopropoxide, Me2AlOiPr, which was recently commercialized as a precursor for Al2O3. It is a liquid at room temperature and has a reasonably high vapor pressure, high enough for atomic layer deposition and/or metal organic chemical vapor deposition. We employed this precursor in the atomic layer deposition (ALD) and metalorganic chemical vapor deposition (MOCVD) of Ga2O3 thin films. Our ALD process, in which water was used as the oxygen source, showed an apparent ALD temperature window between 300 and 325ºC with a growth rate of ~1.5 Aå/cycle. The MOCVD was performed in the temperature range 450-625ºC with oxygen as the reacting gas. The Ga2O3 films deposited in both processes were found to be stoichiometric and amorphous.