This corrects the article DOI: 10.1103/PhysRevLett.111.186602.

We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.

We combine the scanning temporal ultrafast delay (STUD) technique with spin noise spectroscopy (SNS), which is based upon below band gap Faraday rotation to investigate the full temporal dynamics of stochastically orientated electron spins in slightly n-doped bulk GaAs. The application of STUD-SNS boosts the common technical bandwidth limitation of the electro-optic conversion in cw-SNS into the several hundred GHz regime. Numerical simulations highlight the strengths and examine the limitations of STUD-SNS.

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