Bonding is one of the most important tools for the fabrication of Silicon On Insulator (SOI) material and building of MicroElectroMechanical Systems (MEMS). Nevertheless, the most significant limitation in prevalent bonding processes pertains to the high temperature required, limiting choices of materials and components. As a result of this problem, researchers have turned to bond at low temperature (LT). Unfortunately, the lack of fundamental knowledge on LT bonding procedures and their resulting bond interfaces, limits their application. Here electrical and mechanical properties of LT plasma-assisted-wafer bonding are addressed.

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