No abstract

The preparation of the AgSb (SxSe1-x)2 was done by the quenching method. It is a quaternary substance with sulfur. Preparation of AgSb (SxSe1-x)2 thin films with sulfur was done on the glass substrate at room temperature 303K with a pressure vacuum of (0.01) bar by using a technique called pulsed laser deposition at thickness (~100 nanometres). The structural properties of alloys thin films are tested by x-ray diffraction analysis. Our findings showed that all compounds have polycrystalline structure with cubic phase due to the deposition of the AgSb (SxSe1-x)2. The atomic force microscopy is used for showing mean size, wherever mean size decreases, and the roughness becomes more irregularity with the increase of sulphur level in the alloys. The electrical measurements of AgSb (SxSe1-x)2 /p-Si and AgSb (SxSe1-x)2/n-Si heterojunctions which is included I-V properties cell area structures of(0.61) cm2 were measured. The AgSb (SxSe1-x)2/n-Si showed the best results with a maximum open voltage Voc of these heterojunctions with Sulfur level x= 0.4). It was most suitable for solar cell high efficiency (η = 0.07%) at x= 0.4 on n-Si substrate. Keywords: Ag Sb, Quenching Method, Cell Application.

Quenching method was used to prepare alloys of the AgSb(SxSe1-x)2 quaternary compound with different sulfur content. AgSb(SxSe1-x)2 thin films with different sulfur concentration were prepared at room temperature 303K on glass substrate using pulsed laser deposition under vacuum of 10−2 bar, thickness of ∼100nm. The structure of the prepared alloys and thin films were examined by x-ray diffraction. The results declared that all the prepared compounds have polycrystalline with cubic structure whereas the deposited AgSb (SxSe1-x)2 thin films were amorphous. Atomic Force Microscopy revealed that the average grain size decreases while roughness exhibit to increase in non-regular manner with the increase of sulfur concentration. The absorbance and the transmittance were provided from- visible spectrophotometer measurements in the wavelength range (300-1100nm). The results showed that the prepared thin films have indirect allowed band gap which showed absorbable increase with the increase of sulphur content, indeed the optical energy gap increase from 1.1 to 1.7 eV with the increase of sulphur content while all the optical constants (the refractive index n, the extinction coefficient k and real and imaginary parts of dielectric constants εr, εi all declared reduction with the increase of sulfur concentration.

Summery The A.C conductivity of three samples of lanthanide oxide : zinc oxide (La2O3)1-x(ZnO)x pellets with different zinc oxide content which were sintered 1273 K temperatures were studied using LRC meters in the frequency range of 50–106 Hz at temperature of 30 °C. The a.c conductivity, was analyzed depending of the universal power law proposed by Jonsher,. The slope of the relation between logarithm of a.c conductivity and angular frequency represent the s value were in the range (0.44-0.77) which found to increase by increasing of zinc oxide content which coincided with the small polaron (SP) model. The dielectric constant ε1 and dialectic loss ε2 where found to show progressive increase by increasing of zinc oxide content. The a.c conductivity showed exponential dependence upon angular frequency for the samples with low zinc oxide content while the conductivity was frequency dependent in the low frequency range by was frequency independent in the high frequency range.