Femtosecond semiconductor lasers are ideal devices to provide the ultrashort pulses for industrial and biomedical use because of their robustness, stability, compactness and potential low cost. In particular, gain-switched semiconductor lasers have significant advantages of flexible pulse shaping and repetition rate with the robustness. Here we first demonstrate our laser, which is initiated by very strong pumping of 100 times the lasing threshold density, can surpass the photon lifetime limit that has restricted the pulse width to picoseconds for the past four decades and produce an unprecedented ultrashort pulse of 670 fs with a peak power of 7.5 W on autocorrelation measurement. The measured phenomena are reproduced effectively by our numerical calculation based on rate equations including the non-equilibrium intraband carrier distribution, which reveal that the pulse width is limited by the carrier-carrier scattering time, instead of the photon lifetime.

We investigated the gain-switching properties of GaN-based ridge-waveguide lasers on free-standing GaN substrates with low-cost nanosecond current injection. It was observed that the output pulses with intense injection consisted of an isolated short pulse with a duration of around 50 ps at the high-energy side and a long steady-state component at the lower energy side independent of the electric pulse duration. The energy separation between the short pulse and steady-state component can be over 30 meV, favoring short-pulse generation with the spectral filtering technique. The duration of the steady-state component can be tuned freely by controlling the duration and voltage of the electric pulse, which is very useful for generating pulse-width-tunable optical pulses for various applications.

We analyzed the transient gain properties of three gain-switched semiconductor lasers with different materials and cavity structures during pulse lasing. All the semiconductor lasers were pumped with impulse optical pumping, and all the generated gain-switched output pulses were well described by exponential functions in their rise parts, wherein the transient gains were derived according to the rate-equation theoretical model. In spite of the different laser structures and materials, the results consistently demonstrated that a higher transient gain produces shorter output pulses, indicating the dominant role of higher transient gain in the generation of even shorter gain-switched pulses with semiconductor lasers.

We have directly generated optical pulses having a duration of 0.56 ps with a peak power of 25 W by gain switching of multi-section semiconductor lasers in which the optimized lengths of the absorption and gain regions were 50 and 200 µm, respectively. Even though the experiment was conducted via impulsive optical pumping at a low temperature, we observed that the multi-section gain switching suppresses the low-energy tail and chirping inherent to conventional gain switching in single-section lasers and is useful in direct short-pulse generation.

Gain-switched operation of a double-core-waveguide semiconductor laser via traveling-wave optical pumping was achieved. An internal short pulse that traveled forward and backward in the cavity with amplification or decay was generated at high excitation power, and the pulse width and decay time constant of the main pulse were 5.5 and 2.6 ps, respectively; this decay time constant was shorter than the photon lifetime of the cavity or the limit predicted by standard rate-equation theory.