The possibility for white light emitting devices using carbon nitride (CNx) thin films has been studied. Microwave ECR-plasma CVD and RF-sputtering apparatuses have been used for the formation of CNx thin films. In both cases, CH4 was used as the source or sub-source of carbon in order to investigate the effect of hydrogenated carbon nitride for luminescence. The cathodeluminescence (CL) measurement of the film grown by ECR-plasma CVD method showed three peaks of R/G/B. The photoluminescence (PL) measurement of the film grown by RF-sputtering also showed the red peak, which could not be observed in the film without hydrogen. Together with the X-ray Photoelectron Spectroscopy (XPS) analysis data, we concluded that the red peak originates from C-H bonds and blue peak from C-N bonds.

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Carbon nitride (CN x ) with a high nitrogen content was synthesized using a nitrogen atmospheric pressure plasma. In this method, a reaction space with a high temperature and a high nitrogen content was generated. Under this condition, it was expected that a dense nitrogen radical reacting with a carbon radical would saturate carbon bonds, result in a simultaneous increase in the composition ratio (N/C), and produce a C-N single bond. The N/C ratio of the synthesized CN x reached 1.0, as determined by X-ray photoelectron spectroscopy (XPS) analysis. XPS and FT-IR analyses showed that the synthesized CN x consists of a dominant C-N bond with a C=N bond and a CN bond. The synthesized CN x appeared like a sphere with a diameter of about 100 nm. The optical emission of a CN radical was observed under the CN x growth conditions, and similarities and differences between a nitrogen atmospheric pressure plasma and plasma-enhanced chemical-vapor deposition were determined.

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