Automatic emissivity compensating radiation thermometry based on polaradiometry was applied to in situ wafer surface temperature measurement on a flash lamp annealing prototype system. The developed temperature measurement system consists of a dual polarization radiation thermometer and a modulating reference light source, which were mounted on two opposing ports of the process chamber. The intense background radiation from the flash lamp was successfully suppressed by introducing a water flow layer beneath the flash lamp unit and measuring at the water absorption band of 1.95 µm. Millisecond heating and cooling of the wafer was measured for various operating conditions of the flash lamp and for various silicon wafers including wafers with microstructures. The peak temperature was compared with the sheet resistance after treatment and device properties after fabrication. Good correlation was confirmed between sheet resistance and measured peak temperature for various flash lamp intensities irrespective of the surface emissivity or heating conditions. Transistor threshold voltage showed similar correlation, which verifies the applicability of the developed thermometer system to in situ measurement during production.

For underaged Al-Mg-Si alloys with excess Si, No. 5(Al-0.7 mass%Mg-1.1 mass%Si) and No. C5 with 0.2 mass%Cr addition, SSRT tests have been carried out to reveal the contribution of hydrogen embrittlement (HE) to SCC processes at strain rate 6:9 Â 10 À7 s À1 under three environments; ‹dry nitrogen gas, ›wet air with 90% relative humidity and fian acid sodium chloride (ISO) solution. Under env.›, alloy No. 5 with coarse grains shows a decrease in elongation comparing with that under the inert env.‹, while alloy No. C5 with finer gains exhibits rather an increase. The small areas of intergranular(IG)-and transgranular(TG)-facets both with a feature of wavy slips are observed in contact with the free-surface of the specimens, respectively, which are regarded as an evidence of hydrogen-enhanced localized plasticity. Under env.fi, alloy No. 5 shows a high susceptibility to SCC, while alloy No. C5 exhibits a low one improved through Cr addition. On SCC fracture surface of alloy No. 5, three modes of IG one with crystallographic pits, IG another with fine ledges and TG one with an appearance of quasi-cleavage are presented, which indicates that the mechanism of plastic deformation localization induced by anodic dissolution plays a dominant role in the SCC. Even though HE is involved in the SCC process, the effect is estimated to remain small.

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Amorphous compositionally modulated films of Cu-Zr and Fe-Ti have been prepared by sequential sputter deposition of the elemental metals. For Cu-Zr, a critical modulation amplitude has been found, below which the samples are entirely amorphous. The effective interdiffusion coefficient during deposition has been estimated, and found to be assisted by the free energy of mixing and the ion bombardment. X-ray studies of the modulation peaks, using grid scans, reveal a sharp mosaic, and asymmetrical peaks in some samples.