The authors have developed a high-resolution technique for fabricating photomasks at the 10-nm halfpitch logic nodes and beyond. Current mask-manufacturing techniques use a chemically amplified resist (CAR) that has a complex mechanism of acid generation, complicating the criteria for selecting the polymer and the quencher for industrial purposes. Thus, it is important to study fabricating masks with non-CARs. The authors exposed a non-CAR, diluted ZEP520A, to variable-shaped electronbeam lithography and used a postexposure bake (PEB) to modify the resist. Studying how the PEB temperature affected the non-CAR and resultant masks, the authors demonstrate that their technique can produce high-resolution structures. By measuring the critical dimensions (CDs), the authors show that the PEB shrunk, enlarged, and retained the size of 1:1 line-and-space, isolated space, and isolated line patterns, respectively. By optimizing the PEB temperature, the authors improved the line-edge roughness (LER) of the 1:1 line-and-space and isolated space CDs by $40%. To understand how the PEB affected the resultant structures, the authors measured the hardness of cured resists with and without a PEB at various temperatures. Optimizing the PEB temperature of the non-CAR increased the resist contrast, annealing the resist and improving the LER. As such, their technique is capable of high resolutions on the order of 20 nm. The insights the authors gained from optimizing the PEB might be useful when fabricating next-generation masks.

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