We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7nm grown on low extended defect density semipolar (112¯2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200mA under pulsed operation (10% duty cycle) were 5.9mW, 13.4% and 29.2mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.

Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk m-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.

No abstract

A confocal microscope was applied to characterize near‐field optical polarization of light emission from InGaN‐based light‐emitting diodes prepared on a nonpolar orientation. Detection of stray light was significantly reduced as a result of the confocal technique compared to broad‐area measurements. The confocal measurement required no special sample preparation and obtained data was directly interpretable. A polarization ratio of 0.83 was measured on long‐wavelength emitting devices and was sustained over two orders of magnitude of low current range. Energy shifts and separation of emission peaks for the two polarization components were evaluated to discuss the valence‐band structure. Energy shifts indicated that the topmost band |X 〉 had a heavier effective mass than the lower band |Z 〉. Splitting energy of InGaN was estimated to be 30 meV. Results were consistent with the past reports, thus it was confirmed that the confocal microscope is a valid technique to characterize near‐field optical polarization. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)