The substrate temperature effects on the amorphous carbon film growth were investigated, by using the deposition rates and in situ and “real-time” infrared spectroscopy in multiple internal reflection geometry. The deposition rates were decreased, in contrast with the increases of substrate temperature. The growth mode was also changed with substrate temperatures: the film growth depends on the gas phase reaction at low substrate temperature; on the other hand, at high temperature the film grows with the decomposition of the CH3 species.

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Substrate bias effects on deposition process of amorphous carbon film during acetylene plasma were investigated by using infrared absorption spectroscopy in multiple internal reflection geometry (MIR-IRAS). IRAS spectra showed that the relative density of sp 3-hydrocarbon was decreased with substrate bias while that of the sp 2-C and that of sp-CH were increased. Furthermore, the film was formed with the transformation of the adsorbed species generated in acetylene plasma. It suggested that owing to substrate bias, the polymer components were etched and the density of carbon-carbon bonds was increased during deposition.

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