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We are now developing a new in situ deposition process for MgB 2 film as a candidate method to massproduce MgB 2 thin film superconducting tape. In the new method, a MgB 2 film is deposited on a heated metal substrate by a hybrid deposition method, which consists of thermal evaporation of magnesium and sputtering of boron. By using the hybrid deposition method, the substrate temperature can raise from 250 to 350°C, while its fluctuation is kept less than 1°C, which will improve the quality and reproducibility of MgB 2 film in mass production. The J c of MgB 2 film deposited by the hybrid deposition method at 20 K and self-field was more than 30,000 A mm −2 , which was better than the results reported by the two-step in situ process using DC sputtering and 830°C high-temperature post annealing [1] or by the as-grown depostion using sputttering targets of Mg and B [2]. Although we obtained better J c than other deposition methods that use sputtering process, the J c is still lower than the value we obtained by using a co-evaporation method with electron beam (EB). We investigated the film structure and J c -B-T properties of the film made by the hybrid deposition method and compared them with those of the film made by co-evaporation. From the analysis results, we think the reasons for the lower J c are the larger amount of heterogeneous phases such as magnesium oxides in the film and the amorphous B phase under the MgB 2 . We expect to improve the the crystal qualities and superconductivities of the MgB 2 film deposited by the new method by removing impurities in Ar gas during sputtering and thinning the B amorphous phase by increasing the Mg deposition rate in the initial stage of deposition.
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