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The influence of the precleaning process on the characteristics of Si02 film grown by using electron cyclotron resonance (ECR) plasma oxidation at room temperature is presented in this work. We find that the growth rate, electrical properties, and reliability of the ECR plasma grown oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grown oxide. The plasma damage is also discussed. We find that plasma oxidation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and reliability characteristics are obtained by this precleaning technique.

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Surface microroughness and its effects on dielectric breakdown characteristics have been investigated for silicon wafers treated in SC1-based solutions. Surface microroughness was quantified using atomic force microscopy (AFM) and phase shift interferometry (PSI). In contrast to previous reports that SC1 treatment caused undulation of the surface, our observation showed a nominal amount of deterioration. Even prolonged dipping in a solution with high etching rate did not roughen the surface, and the dielectric breakdown characteristics were not affected.