At present, perovskite light-emitting diodes are mostly based on various forms of nanostructures exploiting their exciton confinement property. However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality films, especially on the existing organic charge transport layers. When these charge transport organics are exchanged with thicker CH 3 NH 3 PbCl 3 , the emitting CsPbBr 3 thick polycrystalline films containing CH 3 NH 3 Br are conformally deposited with improved luminescence quality without driving voltage increase. Enhanced crystallinity and prolonged photoluminescence are observed by exploiting interfacial defect passivation and the strain-induced effect in the heterostructures. This approach could lead to high-performance light-emitting diodes and may also be extended to other perovskite devices.

AIPE active deep-red and near infrared iridium(iii) complexes were developed using electron withdrawing substituents and effectively utilized them in solution processable PhOLEDs.

In 2019, the device performances of the display technologies were largely advanced by the development of new materials and of the device architecture and driving scheme. The recent progress in the areas of virtual reality (VR), augmented reality (AR), quantum dot light-emitting diode (QLED), and organic light-emitting diode (OLED) is comprehensively summarized and discussed in this paper. ARTICLE HISTORY

In 2018, great progress in display performances was achieved in the field of virtual reality (VR), augmented reality (AR), quantum dot light-emitting diode (QLED), and organic light-emitting diode (OLED) displays, in addition to the thin-film transistor (TFT) for displays. In this work, the recent progress of the device performances in each display field was summarized, and the future direction of each technology was proposed.

Two different kinds of ancillary ligands such as picolinate and thenoyltrifluoroacetylacetonate have profound effects on the excited state properties of deep red emissive iridium(iii) complexes