Organometal halide perovskite materials have shown high potential as light absorbers for photovoltaic applications. In this work, perovskite planar solar cells were fabricated on corning substrates with the structure as follows: the first layer made of tantalum-doped tin oxide as transparent contact material, followed by sputtering niobium-doped titanium oxide as the compact electron transport layer; covered with perovskite CH3NH3PbI3 as the light harvester by combination between spin-coating and dipping methods; CuSCN was evaporated as the hole transport layer; the final thin Al/Ag electrodes were deposited. This configuration is shortly described as Al/TTO/NTO/CH3NH3PbI3/CuSCN/Ag. Such heterojunctions are expected to be suitable for the development of efficient hybrid solar cells. The fabricated cells were measured under the air mass 1.5 illumination condition, showed the rectification effect and exhibited a power conversion efficiency of 0.007%, with a open circuit voltage of 53.2 mV, a short circuit current of 0.36 mA/cm2, and a form factor of 37%. The power conversion efficiency will be further optimized in near future.

The transparent conductive property based on Ag-doped delafossite nanomaterials are attractive for optical sensing applications due to their good electrical conductivity, good optical transparent and high temperature coefficient of resistance. Several delafossite nanomaterials and Ag-doped nanomaterials have been reported, however, Ag-doped delafossite nanomaterials have not been explored, especially regarding the electrical property with high temperature coefficient of resistance. In this study, Ag-doped delafossite CuAlxOy thin films were deposited by co-sputtering techniques. The electrical properties were carried out on a 4-point prober. The optical properties were characterized on an UV-VIS spectrometer. The results on CuAlxOy doped Ag thin films showed that CuAlxOy doped Ag can be hardly applied for transparent conductive layers. However, these films exhibited relatively high temperature coefficient of resistance of about 3%/K, thus being suitable for applications in microbolometers.

Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by controlling deposition conditions; the bandgap value was in the range between 3.2 eV and 4.2 eV. Good electrical and optical properties were obtained for the films deposited by an appropriate co-sputtering of ZnO and Al targets. These films with a resistivity, about 1.3´10-2W.cm, and a transmittance, higher than 80%, can be applicable for transparent conducting electrodes.