Cerium oxide (CeO2) solution was prepared by cerium(III) acetylacetonate hydrate, methanol, and acetic acid as the starting materials via the metallorganic decomposition (MOD) method. Postdeposition annealing was performed onto the MOD-derived CeO2 films deposited onto n-type Si substrates at different temperatures (600, 800, and 1000°C ) under the flow of argon gas. A slow cooling rate was then accomplished for samples to cool down to room temperature. Four orientations [(111), (200), (220), and (311)] of CeO2 films were revealed by X-ray diffraction analysis as well as α-Ce2normalO3 and cerium silicate (Ce2Si2normalO7) . Epitaxial-like behavior was shown in the sample annealed at 600°C due to the (200)-oriented CeO2 film, and the dominance of this plane ceased with the increase in annealing temperature. A negative voltage shift was observed in all of the samples, indicating that positive oxide charges were trapped in the oxide as a result of the presence of oxygen vacancies. An interface trap density was extracted from the capacitance–voltage measurement, and it was related to the current density–voltage characteristics of the investigated samples. The lowest density was perceived by the sample annealed at 1000°C due to the increment in the Ce2Si2normalO7 layer, reduction in total interface trap density, and effective oxide charge.

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