High dielectric constant rare earth lanthanum cerium oxide (LaxCeyOz) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) at 700°C towards capacitance-voltage characteristics of the films were investigated. As the annealing time was increased from 15 to 45 min, negative flatband voltage shift was observed, signifying the presence of positive charges in the samples. Interface trap density value calculated for the samples has shown to be the lowest for the film annealed for 45 min, owing to the presence of silicate interfacial layer to improve the overall interfacial quality.

Summary High dielectric constant nitrided aluminum zirconium oxide films were successfully fabricated on silicon substrate via an oxidation process infused with different nitrogen gas flow rates at 800°C. The presence of nitrogen piling up at the interface could control the thickness of interfacial layer formation. An increase in the nitrogen gas flow rate might be effective in controlling the overall thickness of the films, yet the nitrogen piling up at the interface impeded the diffusion of oxygen to the interface. Consequently, the interface quality was affected, leading to degradation in the interface‐state density. In addition, the generation of oxygen vacancies in the films, as well as the presence of nitrogen at the interstitial sites, would create a lattice polarization, which decreased the k values. Corresponding effects were also discussed in corroboration with energy band gap, effective oxide charges, and slow trap density, as well as interface‐state density calculated from capacitance and conductance methods.

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