The self‐organization of the polymer in solar cells based on regioregular poly(3‐hexylthiophene) (RR‐P3HT):[6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) is studied systematically as a function of the spin‐coating time ts (varied from 20–80 s), which controls the solvent annealing time ta, the time taken by the solvent to dry after the spin‐coating process. These blend films are characterized by photoluminescence spectroscopy, UV‐vis absorption spectroscopy, atomic force microscopy, and grazing incidence X‐ray diffraction (GIXRD) measurements. The results indicate that the π‐conjugated structure of RR‐P3HT in the films is optimally developed when ta is greater than 1 min (ts ∼ 50 s). For ts < 50 s, both the short‐circuit current (JSC) and the power conversion efficiency (PCE) of the corresponding polymer solar cells show a plateau region, whereas for 50 < ts < 55 s, the JSC and PCE values are significantly decreased, suggesting that there is a major change in the ordering of the polymer in this time window. The PCE decreases from 3.6 % for a film with a highly ordered π‐conjugated structure of RR‐P3HT to 1.2 % for a less‐ordered film. GIXRD results confirm the change in the ordering of the polymer. In particular, the incident photon‐to‐electron conversion efficiency spectrum of the less‐ordered solar cell shows a clear loss in both the overall magnitude and the long‐wavelength response. The solvent annealing effect is also studied for devices with different concentrations of PCBM (PCBM concentrations ranging from 25 to 67 wt %). Under “solvent annealing” conditions, the polymer is seen to be ordered even at 67 wt % PCBM loading. The open‐circuit voltage (VOC) is also affected by the ordering of the polymer and the PCBM loading in the active layer.

Efficient quasi-2D-structure perovskite light-emitting diodes (4.90 cd A(-1) ) are demonstrated by mixing a 3D-structured perovskite material (methyl ammonium lead bromide) and a 2D-structured perovskite material (phenylethyl ammonium lead bromide), which can be ascribed to better film uniformity, enhanced exciton confinement, and reduced trap density.

Regioregular poly(3‐hexyl thiophene) (RR P3HT) is drop‐cast to fabricate field‐effect transistor (FET) devices from different solvents with different boiling points and solubilities for RR P3HT, such as methylene chloride, toluene, tetrahydrofuran, and chloroform. A Petri dish is used to cover the solution, and it takes less than 30 min for the solvents to evaporate at room temperature. The mesoscale crystalline morphology of RR P3HT thin films can be manipulated from well‐dispersed nanofibrils to well‐developed spherulites by changing solution processing conditions. The morphological correlation with the charge‐carrier mobility in RR P3HT thin‐film transistor (TFT) devices is investigated. The TFT devices show charge‐carrier mobilities in the range of 10–4 ∼ 10–2 cm2 V–1 s–1 depending on the solvent used, although grazing‐incidence X‐ray diffraction (GIXD) reveals that all films develop the same π–π‐stacking orientation, where the <100>‐axis is normal to the polymer films. By combining results from atomic force microscopy (AFM) and GIXD, it is found that the morphological connectivity of crystalline nanofibrils and the <100>‐axis orientation distribution of the π–π‐stacking plane with respect to the film normal play important roles on the charge‐carrier mobility of RR P3HT for TFT applications.

A new silole‐containing low bandgap polymer is synthesized by replacing the 5‐position carbon of PCPDTBT with a silicon atom (PSBTBT). Through experiments and computational calculations, we show that the material properties, particular the packing of polymer chains, can be altered significantly. As a result, the polymer changes from amorphous to highly crystalline with the replacement of the silicon atom.