Field-assisted local oxidation on a hydrogen-terminated (001) diamond surface was performed using an atomic force microscope (AFM). Anodic oxidation by a surface water meniscus layer is suggested to account for this oxidation process. Through the oxygenated area, Fowler-Nordheim (F-N) tunneling current was observed. The difference in electron affinity between the hydrogen-terminated surface and the oxygenated area was confirmed by scanning electron microscopic (SEM) observations.

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Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of C–H and C–O bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.