In this paper we propose a new method to reduce the temperature dependence of the leakage current of IGBTs by reducing the temperature dependence of the anode-side current gain α pnp . The temperature dependence of α pnp can be reduced by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. We demonstrate how the temperature dependence of the leakage current is influenced when using deep-level donors instead of shallow-level donors in the field-stop zone.