Three‐dimensional integration in the vertical direction is attractive for organic thin film transistors (OTFTs) and circuits based on OTFTs simply because the device fabrication involves forming layers in the vertical direction. For the vertical stacking of the devices, however, any device in the stacked configuration has to be isolated from the ones above and below the device. We developed approaches that can resolve the problems for the vertical stacking of organic thin film transistors.

A transfer fabrication technique is developed to construct embedded and inverted micro/nanostructures that cannot be readily built by other methods. Transfer patterning/printing is used for the fabrication, which involves transferring a patterned layer on a flat substrate to another substrate that has a higher work of adhesion with the layer than the flat substrate. The technique is relatively simple and fast (∼10s). Inversion of a shape that is made possible by the transfer is the basic concept. This inversion allows fabrication of three-dimensional embedded structures through multiple stacking. The technique could open new avenues for various applications.