The rapid emergency of data science, information technology, and artificial intelligence (AI) relies on massive data processing with high computing efficiency and low power consumption. However, the current von‐Neumann architecture system requires high‐energy budget to process data computing and storage between central computing unit and memory. To overcome this problem, neuromorphic computing system which mimics the operation of human brain has been proposed to perform computing in an energy‐efficient manner. Recently, organic–inorganic halide perovskite compounds have been demonstrated as promising components for neuromorphic devices owing to their strong light absorption, solution processability, and unique properties such as ion migration, carrier trapping effects and phase transition. In this review paper, we report recent advances of neuromorphic devices which employed organic–inorganic halide perovskite compounds by analyzing their fundamental operating mechanisms, device architectures, applications and future prospective.

The use of a pseudo-halide anion, such as thiocyanate (SCN − ), as an additive in the composition-engineered perovskite film is verified and its impact on the perovskite solar cell (PSCs) performance is investigated. The perovskite precursor added with a small amount of formamidinium thiocyanate is deposited by a one-step solution process to prepare the perovskite film. We observe a significant enlargement in domain size after the incorporation of thiocyanate ions in the perovskite film. Moreover, a trace amount of thiocyanate groups across the perovskite film measured by the time-of-flight secondary ion mass spectrometer identifies the thiocyanate existing inside the perovskite bulk, especially near the film bottom. Replacement of halide with thiocyanate groups in the perovskite framework effectively suppresses bulk recombination in the perovskite film, leading to an improvement on the open-circuit voltage (V OC ) and fill factor for the pseudo-halide-based PSCs. Our studies confirm the existence of SCN − in the final film and the passivation effect of SCN − for enhancing the device performance.

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