A differential (or balanced) bandpass filter based on open complementary split ring resonators (OCSRRs) coupled through admittance inverters is presented in this article. Pairs of OCSRRs are symmetrically placed in a mirror configuration between the strips of the differential line and are modeled by means of two series connected parallel resonators. For the differential (odd) mode, there is a virtual ground at the connecting plane between the OCSRR pairs, and the structure is roughly described by the canonical model of a bandpass filter, consisting of a cascade of shunt resonators coupled through admittance inverters. It is demonstrated that, through a proper design of the OCSRR stages, the common mode noise in the vicinity of the differential filter pass band can be efficiently suppressed. Due to the differential mode operation of the filter, it is not necessary to incorporate metallic vias to ground the OCSRRs. Moreover, as compared to other differential filters based on OCSRRs, defected ground structures are not present in the proposed filters. To illustrate the potential of the approach, two balanced bandpass filters are designed, fabricated, and characterized. V C 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:910-916, 2014; View this article online at wileyonlinelibrary.com.ABSTRACT: A dual narrow band wearable antenna is proposed to operate in the range of 2.4-2.5 GHz and 5.7-5.9 GHz for WLAN and telemedicine applications. The proposed design is achieved by simple modification to the rectangular patch antenna. The antenna design is low profile and easy to integrate with the fabric. V C 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:916-918, 2014; View this article online at wileyonlinelibrary.com.

The morphology and locational relationship of the supraorbital notch/foramen, infraorbital foramen, and mental foramen were studied from photographs of 124 Korean skulls (male 35, female 18, unknown sex 71). The infraorbital foramen was on the sagittal plane passing through the supraorbital notch/foramen (36.4%), or lateral to the plane (63.6%). The mental foramen was either on the plane (69.3%), lateral to the plane (21.8%), or medial to the plane (9.0%). The supraorbital notch/foramen, infraorbital foramen, and mental foramen were on the same sagittal plane in 38.1% of the cases. The supraorbital notch (69.9%) was found more frequently than the supraorbital foramen (28.9%). The average distance from the median plane to the center of the supraorbital notch/foramen, infraorbital foramen, and mental foramen was 22.7, 27.2 and 24.4 mm, respectively. The average length of the line from the center of the supraorbital notch/ foramen to the center of the infraorbital foramen was 45.6 mm, and the angle of this line to the sagittal plane was 5.8°. The average distance from the infraorbital margin to the center of the infraorbital foramen was 8.6 mm, and that from the inferior margin of mandible to the center of the mental foramen was 15.5 mm in males and 14.0 mm in females. The average horizontal width of the supraorbital notch/foramen, infraorbital foramen, and mental foramen was 4.7, 4.8 and 2.4 mm, respectively. Most commonly, the infraorbital foramen was lateral to the sagittal plane of the supraorbital notch/foramen, and the mental foramen was on that plane. This locational relationship would be helpful clinically to determine the location of the infraorbital and mental foramina, by palpation of the supraorbital notch.

p -type ZnO films have been fabricated on a (0001) Al2O3 substrate, using Ag2O as a silver dopant by pulsed laser deposition. The structural property of those films is systematically characterized by observing the shift of (0002) peak to investigate the substitution of Ag+ for Zn+. Narrow deposition temperature for Ag-doped p-type ZnO films has been obtained in the range of 200–250°C with the hole concentration of 4.9×1016–6.0×1017cm−3. A neutral acceptor bound exciton has been clearly observed by photoluminescence emitted at 3.317eV in Ag-doped p-type ZnO thin films.

The solid-solid interaction and thermal decomposition behavior of 2wt% Ag2O in ZnO powder have been investigated by using thermogravimetry analysis and differential thermal analysis. Ag2O, which remained stable in ZnO up to 200°C, was observed to be thermally decomposed to Ag+ ions in the temperature range of 200–250°C, suggesting that Ag+ ions were diffused into ZnO matrix. Based on thermal analysis, ZnO:Ag films have been fabricated on a (001) Al2O3 substrate using specifically synthesized Ag-doped ZnO target by pulsed laser deposition. The effect of (002) peak shift on the structural property of Ag-doped ZnO films has been systematically characterized to investigate the influence of the substitution of Ag+ for Zn+. Ag-doped p-type ZnO films have been successfully grown at a deposition temperature in the range of 200–250°C, which is in good agreement with thermally decomposed temperature for Ag2O to Ag+ in ZnO powder, with hole concentrations of 4.9×1016–6.0×1017cm−3, hole mobilities of 0.29–2.32cm2∕Vs, and resistivities of 34–54Ωcm. The effect of Ag doping in ZnO thin film has been systematically investigated and the p-type conduction mechanism has been proposed.

Li–S batteries benefit from numerous advantages such as high theoretical capacity, high energy density, and availability of an abundance of sulfur. However, commercialization of Li–S batteries has been impeded because of low loading amount of active materials and poor cycle performance. Herein, a freestanding bilayer carbon–sulfur (FBCS) cathode is reported with superior electrochemical performance at a high sulfur loading level (3 mg cm−2). The top component of the FBCS cathode is composed of interlacing multiwalled carbon nanotubes (MWCNT) and the bottom component is made up of a mixed layer of sulfur imbedded in MWCNT and N‐doped porous carbon (NPC). The MWCNT layer (top part of FBCS cathode) blocks polysulfide migration from the cathode to the anode, and NPC in the bottom part of the FBCS cathode not only provides spacious active sites but also absorbs polysulfide by the nitrogen functional group. The designed novel FBCS cathode delivered a high initial discharge capacity of 964 and 900 mAh g−1 at 0.5 and 1 C, respectively. It also displayed an excellent capacity retention of 83.1% at 0.5 C and 83.4% at 1 C after 300 cycles.