Creep deformation characteristics of pure tin, and Sn-3.5Ag and Sn-5Sb electronic solder alloys, have been studied at various temperatures between ambient and 473 K (homologous temperature 0.58 to 0.85). Power-law relationships between strain rate and stress were observed at most of the temperatures. The stress exponent (n ϭ 7.6, 5.0, and 5.0) and activation energy (Q c ϭ 60.3, 60.7, and 44.7 kJ/mol) values were obtained in the case of tin, Sn-3.5Ag, and Sn-5Sb respectively. Based on n and Q c values, it is suggested that the rate controlling creep-deformation mechanism is dislocation climb controlled by lattice diffusion in pure tin and Sn-3.5Ag alloy, and viscous glide controlled by pipe diffusion in Sn-5Sb alloy. The results on Sn-3.5Ag bulk material are compared with the initial results on solder bump arrays.

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During the course of solar module encapsulation, the output power of crystalline silicon solar module is less than the sum of the maximum output power of the constituents because of power loss. So it is very important to investigate the power loss caused by encapsulation materials and module production process. In this paper, the power loss of crystalline silicon solar module is investigated by experiments systematically for the first time. It is found that the power loss is mainly caused by the resistance of ribbon and mismatch of solar cells; the total power loss is as high as 3.93% for solar module composed of 72 cells (125 mm × 125 mm) connected in series. Analyzing and reducing the power losses are beneficial to optimizing encapsulation process for the solar module. The results presented in this study give out a direction to decreasing power loss and optimizing encapsulation process of crystalline silicon solar module.

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